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DISCRETE SEMICONDUCTORS
DATA SHEET
LLE16045X NPN microwave power transistor
Product specification Supersedes data of September 1994 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES * Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR * Interdigitated structure provides high emitter efficiency * Gold metallization realizes very good stability of the characteristics and excellent lifetime * Multicell geometry gives good balance of dissipated power and low thermal resistance * Internal input prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.8 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
2 Top view
handbook, 4 columns
LLE16045X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.04 PL1 (W) 4.5 Gpo (dB) 8.5 C (%) typ. 50 Zi; ZL () see Figs 8 and 9
PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
1
c b
3
e
MAM112
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Pi Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current input power total power dissipation storage temperature junction temperature soldering temperature t 10 s; note 1 f = 1.65 GHz; VCE = 24 V; class AB Tmb = 75 C CONDITIONS open emitter RBE = 220 open base open collector
LLE16045X
MIN. - - - - - - - -65 - -
MAX. 45 30 15 3 0.5 1 11 +150 200 235
UNIT V V V V A W W C C C
handbook, halfpage
1
MBD744
handbook, halfpage
15
MBD745
P tot
IC (A)
(W) 10

10 1
5
10 2 1 10
VCE (V)
0 10 2 0 50 100 150 200 T mb ( o C)
Tmb 75 C. (I) Region of permissible DC operation. (II) Permissible extension provided RBE 220 .
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See "Mounting recommendations in the General part of handbook SC19a". CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO V(BR)CER V(BR)CBO V(BR)EBO hFE PARAMETER collector cut-off current collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage DC current gain CONDITIONS IE = 0; VCB = 20 V IC = 1 mA; RBE = 220 IC = 1 mA IE = 1 mA IC = 0.25 A; VCE = 5 V - 30 45 3 15 MIN. PARAMETER thermal resistance from junction to mounting base CONDITIONS Tj = 100 C
LLE16045X
MAX. 8.5 0.2
UNIT K/W K/W
thermal resistance from mounting base to heatsink note 1
MAX. 75 - - - 100
UNIT A V V V
APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.04 PL1 (W) 4.5 typ. 5.5 Gpo (dB) 8.5 typ. 9.5 C (%) typ. 50 Zi; ZL () see Figs 8 and 9
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16045X
handbook, full pagewidth
30
30
5.0
10.0
7.0
4.0 3.0
40 1.1
7.0 3.0
7.0 3.0 1.1 2.0 4.0
40
MBD750
C5
V BB
C6
VCC
F1 input C1 L2 L1 C4 output
C2
C3
MBD751
The test circuit is split into two independent halves, each being 30 x 40 mm in size. Dimensions in mm. Substrate: Teflon fibreglass. Thickness: 0.4 mm. Permittivity: r = 2.55.
Fig.4 Prematching test circuit board.
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16045X
handbook, full pagewidth
BIAS CIRCUIT
PREMATCHING TEST CIRCUIT VCC
R1 TR1 C5 R2 F1 P1 D1 R3 C7 L1 DUT L2 C6
D2
MEA600
Fig.5 Class AB bias circuit.
List of components (see Figs 4 and 5) COMPONENT TR1 C1, C4 C2, C3 C5, C6 C7 D1 D2 L1 L2 P1 R1 R2 R3 F1 Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. DESCRIPTION transistor, BD239 or equivalent DC blocking chip capacitor trimmer capacitor feedthrough bypass capacitor electrolytic capacitor diode BY239 or equivalent; note 1 diode BY239 or equivalent; note 2 4 turns 0.5 mm copper wire; internal diameter = 2 mm 3 turns 0.5 mm copper wire; internal diameter = 2 mm linear potentiometer resistor resistor resistor ferrite bead 4.7 k 100 , 0.25 W 1.5 k, 0.25 W 56 , 0.25 W Philips tube, 12NC = 4330 030 43081 4.2 x 2.2 x 3.2 mm (4B1) 100 pF 0.5 to 5.0 pF 1500 pF 10 F, >30 V ATC 100A101kp Tekelec 727-1SL Erie 1250-003 VALUE ORDERING INFORMATION
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16045X
handbook, halfpage
6
MBD746
handbook, halfpage
15
MBD747
PL (W) 4 I CQ = 40 mA 10 mA 3 mA 2
d im (dBc)
20
I CQ = 3 mA
25
30
35
10 mA
40 40 mA
0 0 0.2 0.4 0.6 0.8 P i (W) 1
45 0 1 2 3 4 Po (av) (W)
VCE = 24 V; f1 = 1650 MHz; f2 = 1650.2 MHz. VCE = 24 V; f = 1650 MHz.
Fig.7 Fig.6 Load power as a function of input power.
Intermodulation distortion as a function of average output power.
Input and optimum load impedances VCE = 24 V; ICQ = 40 mA (see Figs 8 and 9); typical values at PL = PL1. f (GHz) 1.50 1.55 1.60 1.65 1.70 1.75 1.80 Zi () 6.8 + j14.2 7.9 + j15.1 9.2 + j16.0 10.9 + j16.8 13.0 + j17.5 15.5 + j17.8 18.6 + j17.6 ZL () 6.1 + j8.3 5.8 + j7.8 5.6 + j7.3 5.4 + j6.9 5.2 + j6.4 5.0 + j6.0 4.8 + j5.5
1997 Feb 18
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16045X
1
handbook, full pagewidth
0.5
2
1.65 GHz 0.2 1.5 GHz 1.8 GHz 10 +j 0 -j 10 0.2 5 0.2 0.5 1 2 5 10 Zi 5
0.5 1 VCE = 24 V; Zo = 50 ; ICQ = 40 mA.
2
MBD748
Fig.8 Input impedance as a function of frequency; typical values at PL = PL1.
1
handbook, full pagewidth
0.5
ZL
2
1.65 GHz 0.2 1.8 GHz 10 +j 0 -j 10 0.2 5 0.2 0.5 1 2 5 10 1.5 GHz 5
0.5 1 VCE = 24 V; Zo = 10 W; ICQ = 40 mA.
2
MBD749
Fig.9 Optimum load impedance as a function of frequency; typical values at PL = PL1.
1997 Feb 18
8
Philips Semiconductors
Product specification
NPN microwave power transistor
PACKAGE OUTLINE
LLE16045X
19.1 max 0.13 max 2.3 2.0 seating plane 14.22 1 6.5 max 1.7 max
4.8 max
0.25 M
4.5 min
O 3.3 3
6.5 6.2
2 1.7 max
4.5 min
MBB945
Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3.
Fig.10 SOT437A.
1997 Feb 18
9
Philips Semiconductors
Product specification
NPN microwave power transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
LLE16045X
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistor
NOTES
LLE16045X
1997 Feb 18
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01775

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